toshiba MT3S31T vhf-uhf low noise amplifier application - low noise figure : nf=1.3db (@ f=2ghz) - high gain : |s21e|^2=12.5db (@ f=2ghz) maximum ratings (ta=25deg.) marking microwave characteristics (ta=25deg.) toshiba transistor silicon npn epitaxial planer type MT3S31T cha racteristic symbol ra ting unit collector-base voltage v cbo 8v collector-emitter voltage v ceo 4.5 v emitter-base voltage v ebo 1.5 v collector-current i c 24 ma bas e current i b 12 ma collector power dis s ipation p c 100 mw junction temperature t j 125 deg storage temperature range t stg -55-125 deg. p3 3 12 1. base 2. emitter tesm 3. collector jedec - eiaj - toshiba 2-1b1a 1.4 0.05 0.59 0.0 5 0.14 0.0 5 0.8 0.05 0.32 0.0 5 0.22 0.0 5 0.9 0.1 0.4 5 0.4 5 1.2 0.05 unit in mm -toshiba is continually working to improve the quality and the reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a toshiba product could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent products specifications. also, please keep in mind the precautions and conditions set forth in the toshiba semiconductor reliability handbook. -the information contained herein is presented only as a guide for the applications of our products. no responsibility is assum ed by toshiba corporation for any infringements of intellectual property or other right of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. -the information contained herein is subject to change without notice. characteristic symbol test condition min. typ. max. unit transition frequency ft vce=3v, ic=10ma 15 19 - ghz |s21e|^2(1) vce=3v, ic=10ma, f=1ghz - 18 - db |s21e|^2(2) vce=3v, ic=10ma, f=2ghz 8.5 12.5 - db nf(1) vce=3v, ic=4ma, f=1ghz - 1.0 - db nf(2) vce=3v, ic=4ma, f=2ghz - 1.3 2.0 db insertion gain noise figure
toshiba MT3S31T electrical characteristics (ta=25deg.) note cre is measured by 3 terminal method with capacitance bridge. caution this device is sensitive to electrostatic discharge. please make enough tool and equipment earthed when you handle. characteristic symbol test condition min. typ. max. unit collector cut-off current icbo vcb=8v, ie=0 - - 1 ua emitter cut-off current iebo veb=1v, ic=0 - - 1 ua dc current gain hfe vce=3v, ic=10ma 100 - 200 - output capacitance cob vcb=1v, ie=0, f=1mhz - 0.5 - pf reverse transis tor capacitance cre vcb=1v, ie=0, f=1mhz (note 1) - 0.25 0.5 pf
toshiba MT3S31T ft-ic 0 5 10 15 20 25 1 10 100 collector current ic (ma) transition frequency ft (ghz @ vce=3v f=2ghz ta=25deg. |s21e|2-ic 0 2 4 6 8 10 12 14 110100 collector current ic (ma) insertion gain |s21e|2 ( d @ vce=3v f=2ghz ta=25deg. nf- ic 0 1 2 3 4 5 6 7 110100 collector current ic (ma) noise figure nf ( db) 0 2 4 6 8 10 12 14 associated gain ga (db) @ vce=3v f=2ghz ta=25deg. ga noise figur e cob,cre-vcb 0.1 1 0.1 1 10 collector-base voltage vcb (v) reverse transfer capacitance cob (p f output capacitance cre (pf) @ vcb=1v ie=0 f=1mhz ta=25deg. cre
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